IBS-CMSD Colloquium_Prof. Hong-Gyu Park(Dept. of Physics, Korea Uni.)(Mar. 21, 2018)
IBS Center for Molecular Spectroscopy and Dynamics
COLLOQUIUM |
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SPEAKER
Prof. Hong-Gyu Park (Department
of Physics, Korea University)
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TITLE
Novel
nanophotonic devices: graphene-based nanolasers & photon-triggered nanowire
transistors
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ABSTRACT
In
this talk, I will present graphene-based nanolasers and photon-triggered
nanowire transistors. First, I’ll talk about the demonstration of coupled
photonic-crystal nanolasers with asymmetric optical gains [1]. We observed the
phase transition of lasing modes at exceptional points through tuning of the
area of graphene cover on one photonic-crystal cavity and systematic scanning
photoluminescence measurements. As the gain contrast between the two identical
photonic-crystal cavities exceeds the intercavity coupling, the phase
transition occurs from the bonding/anti-bonding lasing modes to the
single-amplifying lasing mode, which is confirmed by the experimental
measurement of the mode images and the theoretical modeling of coupled cavities
with asymmetric gains. In addition, we demonstrated active tuning of
exceptional points by controlling the optical loss of graphene through
electrical gating. Furthermore, I’ll present the demonstration of on/off
switching of single- and double-cavity photonic crystal lasers by electrical
gating of a monolayer graphene sheet on top of photonic crystal cavities [2].
The optical loss of graphene was controlled by varying the gate voltage, with
the ion gel atop the graphene sheet.
Second, I’ll show photon-triggered nanowire transistors, photon-triggered nanowire logic gates and a single nanowire photodetection system [3]. Nanowires are synthesized with long crystalline Si segments connected by short porous Si segments. Exposing the porous Si segment to light triggers a current in the nanowire with a high on/off ratio of >8 × 106. A device that contains two porous Si segments along the nanowire can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrated photon-triggered logic gates including AND, OR and NAND gates. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometer-resolution photodetection system. We believe that photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.
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DATE AND VENUE
March 21, 2018 (Wednesday,
5:00 - 6:00 pm)
Seminar Room 116, KU R&D Center
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LANGUAGE
Korean
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INVITED BY
Director Minhaeng Cho